• Mono-Crystalline Silicon Ingot Pulling Graphite Parts
  • Mono-Crystalline Silicon Ingot Pulling Graphite Parts
  • Mono-Crystalline Silicon Ingot Pulling Graphite Parts
  • Mono-Crystalline Silicon Ingot Pulling Graphite Parts
  • Mono-Crystalline Silicon Ingot Pulling Graphite Parts
  • Mono-Crystalline Silicon Ingot Pulling Graphite Parts

Mono-Crystalline Silicon Ingot Pulling Graphite Parts

Type: Graphite Machined
Composition: C
Carbon Content: 99.98%
Grade: Customization
Forming Way: Isostatic Graphite
Crystal Morphology: Artificial Graphite
Samples:
US$ 10/Piece 1 Piece(Min.Order)
| Request Sample
Customization:
Diamond Member Since 2024

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Basic Info.

Transport Package
Wooden Case
Trademark
SIAMC
Origin
China
HS Code
681519

Product Description

SIAMC is capable of producing large-size high-purity hot zone materials for both N-type and P-type mono-crystalline silicon growth furnaces, with dimensions of up to 36 inches and above. Our hot zone materials include graphite components, carbon-carbon composites, and insulation materials. In particular, our PyC coatings can significantly improve the performance of graphite components by increasing their oxidation resistance and reducing contamination, while our SiC coatings provide superior thermal and mechanical properties for demanding high-temperature applications. With our advanced manufacturing technology and quality control, SIAMC offers reliable and cost-effective solutions for the photovoltaic industry.



Mono-Crystalline Silicon Ingot Pulling Graphite PartsMono-Crystalline Silicon Ingot Pulling Graphite PartsMono-Crystalline Silicon Ingot Pulling Graphite PartsMono-Crystalline Silicon Ingot Pulling Graphite PartsMono-Crystalline Silicon Ingot Pulling Graphite Parts

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