Semiconductor Mono-Crystalline Silicon Growing

Product Details
Customization: Available
Carbon Content: High-Carbon
Composition: C
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Number of Employees
439
Year of Establishment
2007-10-31
  • Semiconductor Mono-Crystalline Silicon Growing
  • Semiconductor Mono-Crystalline Silicon Growing
  • Semiconductor Mono-Crystalline Silicon Growing
  • Semiconductor Mono-Crystalline Silicon Growing
  • Semiconductor Mono-Crystalline Silicon Growing
  • Semiconductor Mono-Crystalline Silicon Growing
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Basic Info.

Model NO.
12inch
Crystal Morphology
Artificial Graphite
Forming Way
Isostatic Graphite
Grade
HP
Type
Graphite Crucible
Transport Package
Wooden Case
Specification
12 inch
Trademark
SIAMC
Origin
China
HS Code
681519

Product Description

SIAMC's high-purity thermal field materials play a crucial role in the manufacturing of silicon semiconductor single crystal furnaces. SIAMC can produce large-size thermal field materials of 36 inches or more, with graphite purity reaching as high as 5 ppm. The thermal field materials include graphite components, carbon-carbon components, and insulation materials. Graphite components can also be coated with PyC or SiC coatings according to process requirements.
SIAMC's thermal field materials are of exceptional quality, meeting the high standards demanded by users in the integrated circuit industry. Our materials are carefully engineered to ensure optimal performance and reliability, and are trusted by manufacturers to produce high-quality, defect-free single crystal silicon ingots.



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