Porous Graphite for Silicon Carbide Ingot Growing

• Application: Silicon Carbide Industry
• Carbon Content: High-Carbon
• Composition: Porous Graphite
• Crystal Morphology: Artificial Graphite
• Forming Way: Artificial Graphite
• Grade: HP
• Model NO.: P401
• Type: Porous Graphite
• Purity: 5ppm
• Transport Package: Wooden Case
• Specification: D190*350mm, D250*350mm
• Trademark: SIAMC
• Origin: China
• HS Code: 681519
• Production Capacity: 3000PCS/Year

Product Description

Our porous graphite is a high-quality material with a density of 1.15 g/cm³ and a porosity of 47%, making it an excellent choice for applications that require high permeability. With an average pore size of 40 microns, it is ideal for filtration, gas diffusion, and catalysis. Additionally, our porous graphite has a compressive strength of 16 MPa, ensuring its durability and reliability. Its unique combination of properties, including high thermal conductivity and chemical stability, makes it an ideal material for various applications in the chemical, petrochemical, and semiconductor industries.

Specific Applications:

•  Photovoltaic industry    
•  Semiconductor application      
•  EDM
•  3D glass mold    
• Optical fiber application   
•  High temperature furance application
•  Metallurgy application     
• Chemical heat exchanger