Pyroc® Porous Graphite for Silicon Carbide Ingot Growing

• Customization: Available
• Carbon Content: High-Carbon
• Composition: Porous Graphite
• Model NO.: P401
• Forming Way: Artificial Graphite
• Grade: P401
• Type: Porous Graphite
• Purity: 5ppm
• Transport Package: Wooden Case
• Specification: D190*350mm, D250*350mm
• Trademark: SIAMC
• Origin: China

Product Description

Our porous graphite is a high-quality material with a density of 1.15 g/cm³ and a porosity of 47%, making it an excellent choice for applications that require high permeability. With an average pore size of 40 microns, it is ideal for filtration, gas diffusion, and catalysis. Additionally, our porous graphite has a compressive strength of 16 MPa, ensuring its durability and reliability. Its unique combination of properties, including high thermal conductivity and chemical stability, makes it an ideal material for various applications in the chemical, petrochemical, and semiconductor industries.
Uniform pore distribution, stable performance;
Purity can reach the level of Sppm, meeting the requirements of high-purity applications for material purity;
High strength and good mechanical processability;
Mainly used in high-temperature fields such as SiC semiconductor crystal growth.