Sic Ingot Growing

• Type: Graphite Parts
• Composition: C
• Carbon Content: 99.9995
• Grade: Customization
• Forming Way: Isostatic Graphite
• Crystal Morphology: Artificial Graphite
• Transport Package: Wooden Case
• Trademark: SIAMC
• Origin: China
• HS Code: 681519

Product Description

SIAMC's graphite and insulation materials are widely used in the thermal fields of silicon carbide semiconductor crystal growth. The thermal field of silicon carbide crystal growth includes several components, such as graphite crucibles and internal components, graphite seed covers, graphite heating tubes, graphite heaters, porous graphite, and insulation materials.
Graphite crucibles and internal components are commonly used in the crystal growth process because of their high-temperature resistance and thermal stability. SIAMC's graphite products, including graphite crucibles and graphite heating tubes, have excellent thermal conductivity, high strength, and good corrosion resistance, making them suitable for use in the high-temperature environment of silicon carbide crystal growth.
In addition to graphite products, SIAMC also produces insulation materials, which are used to insulate the high-temperature components of the crystal growth process. These materials have excellent thermal insulation properties, and can effectively reduce the heat loss of the crystal growth process, leading to energy savings and increased process efficiency.